MB84VD22184FM-70 Datasheet, PDF (42/46 Pages) SPANSION – 32M (X16) FLASH MEMORY & 4M (X16) STATIC RAM

MB84VD22184FM/VD22194FM-70
2. Data Retention Characteristics (SRAM)
Parameter
Symbol
Data Retention Supply Voltage
VDH
Standby Current
VDH = 3.0 V
IDDS2
Chip Deselect to Data Retention Mode Time
tCDR
Recovery Time
tR
Note : tRC: Read cycle time
• CE1s Controlled Data Retention Mode *¹
VCCs
Data Retention Mode
2.7 V
Value
Min Typ Max
1.5
—
3.1
—
—
10
0
—
—
tRC
—
—
Unit
V
µA
ns
ns
VIH
*2
*2
VDH
VCCs – 0.2 V
CE1s
tCDR
tR
GND
*1 : In CE1s controlled data retention mode, input level of CE2s should be fixed Vccs to Vccs–0.2 V or Vss
to 0.2 V during data retention mode. Other input and input/output pins can be used between –0.3 V to
Vccs+0.3 V.
*2 : When CE1s is operating at the VIH Min level, the standby current is given by ISB1s during the transition
of VCCs from VCCs Max to VIH Min level.
• CE2s Controlled Data Retention Mode *
VCCs
Data Retention Mode
2.7 V
VDH
VIH
tCDR
tR
CE2s
VIL
0.2 V
GND
* : In CE2s controlled data retention mode, input and input/output pins can be used between
–0.3 V to Vccs+0.3V.
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