AM49LV6408M Datasheet, PDF (42/63 Pages) SPANSION – Stacked Multi-chip Package (MCP) 64 Mbit (4 M x 16 bit) Flash Memory and 8 Mbit (512K x 16-Bit)

ADVANCE INFORMATION
PSEUDO SRAM DC AND
OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max Unit
I_LI
Input Leakage Current
I_LO
Output Leakage Current
I_CC1s Average Operating Current
I_CC2s Average Operating Current
V_IL
Input Low Voltage
V_IN = V_SS to V_CC
–1.0
CE1#s = V_IH, CE2s = V_IL or OE# =
V_IH or WE# = V_IL, V_IO= V_SS to V_CC
–1.0
Cycle time = 1 µs, 100% duty,
I_IO = 0 mA, CE1#s ≤ 0.2 V,
CE2 ≥ V_CC – 0.2 V, V_IN ≤ 0.2 V or
3
V_IN ≥ V_CC – 0.2 V
Cycle time = Min., I_IO = 0 mA,
100% duty, CE1#s = V_IL, CE2s =
12
V_IH, V_IN = V_IL = or V_IH
–0.2
(Note 3)
1.0
µA
1.0
µA
5
mA
25
mA
0.4
V
V_IH
Input High Voltage
2.2
V_CC+0.2
(Note 2)
V
V_OL
Output Low Voltage
I_OL = 2.0 mA
V_OH Output High Voltage
I_OH = –1.0 mA
2.2
I_SB
Standby Current (TTL)
CE1#s = V_IH, CE2 = V_IL, Other
inputs = V_IH or V_IL
I_SB1
Standby Current (CMOS)
CE1#s=V_IH, CE2= V_IL:
Other inputs = V_IH or V_IL:
t_A = 85°C, V_CC = 3.0 V
I_SB2
Standby Current (CMOS)
CE1#s=V_IH, CE2= V_IL:
Other inputs = V_IH or V_IL:
t_A = 85°C, V_CC = 3.3 V
Notes:
1. T_A= –40° to 85°C, otherwise specified.
2. Overshoot: V_CC+1.0V if pulse width ≤ 20 ns.
3. Undershoot: –1.0V if pulse width ≤ 20 ns.
4. Overshoot and undershoot are sampled, not 100% tested.
5. Stable power supply required 200 µs before device operation.
0.4
V
V
0.3
mA
60
µA
85
µA
40
Am49LV6408M
November 5, 2003