S25FL008K0XMFI041 Datasheet, PDF (39/60 Pages) SPANSION – 8-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

Data Sheet (Preliminary)
Figure 7.26 Erase/Program Suspend Instruction Sequence
CS#
Mode 3
CLK ^{Mode 0}
SI
0 123 456 7
Instruction (75h)
t _SUS
Mode 3
Mode 0
High Impedance
SO
Accept Read or Program Instruction
7.0.24
Erase / Program Resume (7Ah)
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase operation
or the Page Program operation after an Erase/Program Suspend. The Resume instruction “7Ah” will be
accepted by the device only if the SUS bit in the Status Register equals to 1 and the BUSY bit equals to 0.
After issued the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will be set from 0 to 1 within
200 ns and the Sector or Block will complete the erase operation or the page will complete the program
operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume instruction “7Ah” will be ignored
by the device. The Erase/Program Resume instruction sequence is shown in Figure 7.27.
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be
issued within a minimum of time of “t_SUS” following a previous Resume instruction.
CS#
Mode 3
CLK Mode 0
SI
Figure 7.27 Erase/Program Resume Instruction Sequence
0 12 3 4 56 7
Instruction (7Ah)
Mode 3
Mode 0
Resume Sector or Block Erase
October 14, 2010 S25FL008K_00_02
S25FL008K
39