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| AM29BDS643G Datasheet, PDF (39/49 Pages) SPANSION – 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | |||
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DATA SHEET
AC CHARACTERISTICS
Erase/Program Operations
Parameter
JEDEC Standard Description
7G/7M
5K
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
tAVDP AVD# Low Time
Min
tDVWH
tDS
Data Setup Time
Min
tWHDX
tDH
Data Hold Time
Min
tGHWL
tGHWL Read Recovery Time Before Write
Typ
tELWL
tCS
CE# Setup Time
Typ
tWHEH
tCH
CE# Hold Time
Typ
tWLWH
tWP/tWRL Write Pulse Width
Typ
tWHWL
tWPH
Write Pulse Width High
Typ
tSR/W Latency Between Read and Write Operations
Min
tWHWH1
tWHWH1 Programming Operation (Note 2)
Typ
tWHWH1
tWHWH1 Accelerated Programming Operation (Note 2)
Typ
tWHWH2
tWHWH2 Sector Erase Operation (Notes 2, 3)
Typ
tVPP
VPP Rise and Fall Time
Min
tVPS
VPP Setup Time (During Accelerated Programming)
Min
tVCS
VCC Setup Time
Min
80
45
5
4
7
6
12
11
45
25
0
0
0
0
50
25
30
20
0
11.5
4
0.4
500
1
50
Notes:
1. Not 100% tested.
2. See the âErase and Programming Performanceâ section for more information.
3. Does not include the preprogramming time.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
sec
ns
µs
µs
May 8, 2006 25692A2
Am29BDS643G
37
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