S29JL064J70TFI000 Datasheet, PDF (38/61 Pages) SPANSION – CMOS 3.0 Volt-Only, Simultaneous Read/Write Flash Memory

Data Sheet
Figure 11.1 Data# Polling Algorithm
34!24
2EADÃ¥$1n$1
!DDRåå6!
$1åå$ATA
9ES
.O
.O
$1åå
9ES
2EADÃ¥$1n$1
!DDRåå6!
$1åå$ATA
9ES
.O
&!),
0!33
Notes:
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being
erased. During chip erase, a valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5.
11.2
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to V_CC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or one
of the banks is in the erase-suspend-read mode.
Table 11.1 on page 42 shows the outputs for RY/BY#.
When DQ5 is set to “1”, RY/BY# will be in the BUSY state, or “0”.
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S29JL064J
S29JL064J_00_05 December 16, 2011