AM29F040B-09 Datasheet, PDF (31/36 Pages) SPANSION – 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

DATA SHEET
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time (Note 3)
Typ
(Note 1)
1
8
7
3.6
Max
(Note 2) Unit
Comments
8
sec
Excludes 00h programming prior to erasure (Note 4)
64
sec
300 µs
Excludes system-level overhead (Note 5)
10.8 sec
Notes:
1. Typical program and erase times assume the following conditions: 25° C, 5.0 V V_CC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V_CC = 4.5 V (4.75 V for -55), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set DQ5 = 1. See the section on DQ5 for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 4
for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Input Voltage with respect to V_SS on all I/O pins
V_CC Current
Includes all pins except V_CC. Test conditions: V_CC = 5.0 V, one pin at a time.
Min
–1.0 V
–100 mA
Max
V_CC + 1.0 V
+100 mA
TSOP PIN CAPACITANCE
Parameter Symbol
Parameter Description
C_IN
Input Capacitance
C_OUT
Output Capacitance
C_IN2
Control Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions T_A = 25°C, f = 1.0 MHz.
Test Setup
V_IN = 0
V_OUT = 0
V_IN = 0
Typ
Max
Unit
6
7.5
pF
8.5
12
pF
7.5
9
pF
November 11, 2009 21445E8
Am29F040B
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