MBM29DL800TA Datasheet, PDF (30/57 Pages) SPANSION – FLASH MEMORY CMOS 8M (1M x 8 / 512K x 16) BIT

MBM29DL800TA-70/90/MBM29DL800BA-70/90
s AC CHARACTERISTICS
• Read Only Operations Characteristics
Parameter
Read Cycle Time
Address to Output Delay
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From Addresses,
CE or OE, Whichever Occurs First
RESET Pin Low to Read Mode
CE to BYTE Switching Low or High
Symbols
JEDEC
tAVAV
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
Standard
tRC
tACC
tCE
tOE
tDF
tDF
Test
Setup
—
CE = VIL
OE = VIL
OE = VIL
—
—
—
tAXQX
tOH
—
—
tREADY
—
—
tELFL
tELFH
—
Note: Test Conditions:
Output Load: 1TTL gate and 30 pF (MBM29DL800TA/BA-70)
1TTL gate and 100 pF (MBM29DL800TA/BA-90
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V or 3.0 V
Timing measurement reference level
Input: 1.5 V
Output:1.5 V
Value (Note)
-70
-90
Unit
Min Max Min Max
70 — 90 — ns
— 70 — 90 ns
— 90 — 90 ns
— 30 — 35 ns
— 25 — 30 ns
— 25 — 30 ns
0 — 0 — ns
— 20 — 20 µs
— 5 — 5 ns
Device
Under
Test
CL
3.3 V
IN3064
or Equivalent
2.7 kΩ
6.2 kΩ
Diodes = IN3064
or Equivalent
Notes: CL = 30 pF including jig capacitance (MBM29DL800TA/BA-70)
CL = 100 pF including jig capacitance (MBM29DL800TA/BA-90)
Figure 4 Test Conditions
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