AM29F016D_09 Datasheet, PDF (27/44 Pages) SPANSION – 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

DATA SHEET
DC CHARACTERISTICS
TTL/NMOS Compatible
Parameter
Symbol
Parameter Description
Test Description
I_LI
Input Load Current
V_IN = V_SS to V_CC, V_CC = V_CC Max
I_LIT
A9 Input Load Current
V_CC = V_CC Max, A9 = 12.5 V
I_LO
Output Leakage Current
V_OUT = V_SS to V_CC, V_CC = V_CC Max
I_CC1 V_CC Read Current (Note 1)
CE# = V_IL, OE# = V_IH
I_CC2 V_CC Write Current (Notes 2, 3) CE# = V_IL, OE# = V_IH
I_CC3
V_CC Standby Current
(CE# Controlled)
V_CC = V_CC Max, CE# = V_IH,
RESET# = V_IH
I_CC4
V_CC Standby Current
(RESET# Controlled)
V_CC = V_CC Max, RESET# = V_IL
V_IL
Input Low Level
V_IH Input High Level
V_ID
Voltage for Autoselect and Sector
Protect
V_CC = 5.0 V
V_OL
V_OH
V_LKO
Output Low Voltage
Output High Level
Low V_CC Lock-out Voltage
I_OL = 12 mA, V_CC = V_CC Min
I_OH = –2.5 mA V_CC = V_CC Min
Min
Typ Max Unit
±1.0
µA
50
µA
±1.0
µA
25
40
mA
40
60
mA
0.4
1.0
mA
0.4
1.0
mA
–0.5
0.8
V
2.0
V_CC + 0.5 V
11.5
12.5
V
0.45
V
2.4
V
3.2
4.2
V
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Description
I_LI
Input Load Current
V_IN = V_SS to V_CC, V_CC = V_CC Max
I_LIT
A9 Input Load Current
V_CC = V_CC Max, A9 = 12.5 V
I_LO
Output Leakage Current
V_OUT = V_SS to V_CC, V_CC = V_CC Max
I_CC1 V_CC Read Current (Note 1)
CE# = V_IL, OE# = V_IH
I_CC2 V_CC Write Current (Notes 2, 3) CE# = V_IL, OE# = V_IH
I_CC3
V_CC Standby Current
(CE# Controlled) (Note 4)
V_CC = V_CC Max, CE# = V_CC ± 0.5 V,
RESET# = V_CC ± 0.5 V
I_CC4
V_CC Standby Current
(RESET# Controlled) (Note 4)
V_CC = V_CC Max,
RESET# = V_SS ± 0.5 V
V_IL
Input Low Level
V_IH Input High Level
V_ID
Voltage for Autoselect
and Sector Protect
V_CC = 5.0 V
V_OL
V_OH1
V_OH2
V_LKO
Output Low Voltage
Output High Voltage
Low V_CC Lock-out Voltage
I_OL = 12 mA, V_CC = V_CC Min
I_OH = –2.5 mA, V_CC = V_CC Min
I_OH = –100 μA, V_CC = V_CC Min
Notes for DC Characteristics (both tables):
1. The I_CC current is typically less than 1 mA/MHz, with OE# at V_IH.
2. I_CC active while Embedded Program or Embedded Erase algorithm is in progress.
3. Not 100% tested.
4. For CMOS mode only I_CC3, I_CC4 = 20 µA at extended temperature (>+85°C).
Min
Typ Max Unit
±1.0
µA
50
µA
±1.0
µA
25
40
mA
30
40
mA
1
5
µA
1
5
µA
–0.5
0.7x V_CC
11.5
0.8
V
V_CC + 0.3 V
12.5
V
0.85 V_CC
V_CC – 0.4
3.2
0.45
V
V
V
4.2
V
November 16, 2009 21444E9
Am29F016D
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