MB9B410T Datasheet, PDF (115/129 Pages) SPANSION – This document states the current technical specifications regarding

DataSheet
7. Flash Memory Write/Erase Characteristics
(1) Write / Erase time
Parameter
Value
Typ*
Max*
(Vcc = 2.7V to 5.5V, Ta = - 40°C to + 85°C)
Unit
Remarks
Sector erase ^{Large Sector}
0.7
time
Small Sector
0.3
3.7
1.1
s
Includes write time prior to internal
erase
Half word (16-bit)
write time
12
384
μs
Not including system-level overhead
time.
Chip erase time
13.6
68
s
Includes write time prior to internal
erase
*: The typical value is immediately after shipment, the maximam value is guarantee value under 100,000
cycle of erase/write.
(2) Write cycles and data hold time
Erase/write cycles
(cycle)
Data hold time
(year)
1,000
20*
10,000
10*
100,000
5*
*: At average + 85°C
Remarks
112
MB9B410T-DS706-00018-2v0-E, February 10, 2015