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| AM75PDL191BHHA Datasheet, PDF (112/129 Pages) SPANSION – 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory | |||
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ADVANCE INFORMATION
AC CHARACTERISTICS
Erase and Program Operations
Parameter
JEDEC
Std Description
tAVAV
tAVWL
tWLAX
tWC
Write Cycle Time (Note 1)
Min
tAS
Address Setup Time
Min
tASO Address Setup Time to OE# low during toggle bit polling Min
tAH
Address Hold Time
Min
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
tDVWH
tDS
Data Setup Time
Min
tWHDX
tDH
Data Hold Time
Min
tOEPH Output Enable High during toggle bit polling
Min
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
tELWL
tWHEH
tWLWH
tWHDL
tWHWH1
tWHWH1
tCS
tCH
tWP
tWPH
tSR/W
tWHWH1
tWHWH1
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Latency Between Read and Write Operations
Programming Operation (Note 2)
Accelerated Programming Operation,
Word or Byte (Note 2)
Min
Min
Min
Min
Min
Word Typ
Typ
tWHWH2
tWHWH2 Sector Erase Operation (Note 2)
Typ
tVCS
VCC Setup Time (Note 1)
Min
tRB
Write Recovery Time from RY/BY#
Min
tBUSY Program/Erase Valid to RY/BY# Delay
Max
Notes:
1. Not 100% tested.
2. See the âPhysical Dimensionsâ section for more information.
All Speed Options
70
0
15
40
0
40
0
20
0
0
0
30
30
0
7
4
0.4
50
0
90
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
sec
µs
ns
ns
110
Am75PDL191BHHa/Am75PDL193BHHa
February 6, 2004
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