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MBM29DL32TF-70 Datasheet, PDF (10/70 Pages) SPANSION – FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation
MBM29DL32TF/BF-70
MBM29DL32TF/BF User Bus Operations Table (Byte mode : BYTE = VIL)
Operation
CE
OE
WE
DQ15
/A-1
A0
A1
A2
A3
A6
A9 DQ7 to DQ0 RESET
WP/
ACC
Standby
H X X X X X X X X X High-Z
H
X
Auto-Select
Manufacturer Code *1
L L H L L L L L L VID
Code
H
X
Auto-Select Device
Code *1
L L H L H L L L L VID Code
H
X
Extended Auto-Select L L H L L H H H L VID Code
H
X
Device Code *1
L L H L H H H H L VID Code
H
X
Read *3
L L H A-1 A0 A1 A2 A3 A6 A9
DOUT
H
X
Output Disable
L H H X X X X X X X High-Z
H
X
Write (Program/Erase) L H L A-1 A0 A1 A2 A3 A6 A9
DIN
H
X
Enable Sector Group
Protection *2, *4
L VID
L L H L L L VID
X
H
X
Verify Sector Group
Protection *2, *4
L L H L L H L L L VID Code
H
X
Temporary Sector
Group Unprotection *5
XXX
X
XXXXXX
X
VID
X
Reset (Hardware) /
Standby
X X X X X X X X X X High-Z
L
X
Boot Block Sector Write
Protection
X
X
X
X
XXXXXX
X
X
L
Legend : L = VIL, H = VIH, X = VIL or VIH, = Pulse input. See “sDC CHARACTERISTICS” for voltage levels.
*1: Manufacturer and device codes may also be accessed via a command register write sequence. See
“MBM29DL32TF/BF Command Definitions Table”.
*2: Refer to section on “8. Sector Group Protection” in sFUNCTIONAL DESCRIPTION.
*3: WE can be VIL if OE is VIL, OE at VIH initiates the write operations.
*4: VCC = +2.7 V to +3.6 V
*5: Also used for extended sector group protection.
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