S29CD016G Datasheet, PDF (1/91 Pages) SPANSION – 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory

S29CD016G
16 Megabit (512 K x 32-Bit)
CMOS 2.5 Volt-only Burst Mode, Dual Boot,
Simultaneous Read/Write Flash Memory
Data Sheet
Distinctive Characteristics
Architecture Advantages
„ Simultaneous Read/Write operations
— Two bank architecture: large bank/ small bank
— Data can be read from bank while executing erase/
program functions in other bank
— Zero latency between read and write operations
„ User-Defined x32 Data Bus
„ Dual Boot Block
— Top and bottom boot sectors in the same device
„ Flexible sector architecture
— Eight 8 Kbytes, thirty 64 Kbytes, and eight 8 Kbytes
sectors
„ Manufactured on 170 nm process technology
„ SecSi (Secured Silicon) Sector (256 Bytes)
— Factory locked and identifiable: 16 bytes for secure,
random factory Electronic Serial Number; remainder
may be customer data programmed by Spansion™
— Customer lockable: Can be read, programmed, or
erased just like other sectors. Once locked, data
cannot be changed
„ Programmable Burst interface
— Interface to any high performance processor
— Modes of Burst Read Operation:
— Linear Burst: 4 double words and 8 double words
with wrap around
„ Program Operation
— Ability to perform synchronous and asynchronous
write operations of burst configuration register
settings independently
„ Single power supply operation
— Optimized for 2.5 to 2.75 volt read, erase, and
program operations
„ Compatibility with JEDEC standards (JC42.4)
— Software compatible with single-power supply Flash
— Backward-compatible with AMD Am29LV and Am29F
and Fujitsu MBM29LV and MBM29F flash memories
Performance Characteristics
„ High performance read access
— Initial/random access times as fast as 54 ns
— Burst access time as fast as 9 ns for ball grid array
package
„ Ultra low power consumption
— Burst Mode Read: 90 mA @ 66 MHz max,
— Program/Erase: 50 mA max
— Standby mode: CMOS: 60 µA max
„ 1 million write cycles per sector typical
„ 20 year data retention typical
„ VersatileI/O™ control
— Device generates data output voltages and tolerates
data input voltages as determined by the voltage on
the V_IO pin
— 1.65 V to 2.75 V compatible I/O signals
— 3.6 V tolerant I/O signals
Software Features
„ Persistent Sector Protection
— A command sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector (requires only V_CC levels)
„ Password Sector Protection
— A sophisticated sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector using a user-definable 64-bit password
„ Supports Common Flash Interface (CFI)
„ Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
„ Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
Hardware Features
„ Program Suspend/Resume & Erase Suspend/
Resume
— Suspends program or erase operations to allow
reading, programming, or erasing in same bank
„ Hardware Reset (RESET#), Ready/Busy# (RY/
BY#), and Write Protect (WP#) inputs
„ ACC input
— Accelerates programming time for higher throughput
during system production
„ Package options
— 80-pin PQFP
— 80-ball Fortified BGA
Publication Number S29CD016_00 Revision A Amendment 4 Issue Date November 5, 2004
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statutory. Spansion LLC assumes no liability for any damages of any kind arising out of the use of the information in this document.