MBM29SL800TD-10 Datasheet, PDF (1/56 Pages) SPANSION – FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT

FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
8 M (1 M × 8/512 K × 16) BIT
MBM29SL800TD/BD-10/12
DS05-20871-5E
s DESCRIPTION
The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512
Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
SCSP packages. These devices are designed to be programmed in-system with the standard system 3.0 V VCC
supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be repro-
grammed in standard EPROM programmers.
s PRODUCT LINE UP
(Continued)
Part No.
Ordering Part No.
VCC = +2.0 V ± 0.2
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
MBM29SL800TD/MBM29SL800BD
−10
−12
100
120
100
120
35
50
s PACKAGES
48-pin Plastic TSOP (I) 48-pin Plastic TSOP (I)
Marking Side
48-pin Plastic FBGA
48-pin Plastic SCSP
(FPT-48P-M19)
Marking Side
(FPT-48P-M20)
(BGA-48P-M12)
(WLP-48P-M03)