MBM29PL32TM90 Datasheet, PDF (1/68 Pages) SPANSION – FLASH MEMORY CMOS 32 M (4M X 8/2M X 16) BIT MirrorFlash

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20907-3E
FLASH MEMORY
CMOS
32 M (4M × 8/2M × 16) BIT
MirrorFlash^TM*
MBM29PL32TM/BM 90/10
s DESCRIPTION
The MBM29PL32TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by
16 bits. The MBM29PL32TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to be
programmed in-system with the standard 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or
erase operations. The devices can also be reprogrammed in standard EPROM programmers.
s PRODUCT LINE UP
(Continued)
Part No.
VCC
Max Address Access Time
Max CE Access Time
Max Page Read Access Time
MBM29PL32TM/BM
90
10
3.0 V to 3.6 V
3.0 V to 3.6 V
90 ns
100 ns
90 ns
100 ns
25 ns
30 ns
s PACKAGES
48-pin plastic TSOP (1)
48-ball plastic FBGA
(FPT-48P-M19)
(BGA-48P-M20)
* : MirrorFlash^TM is a trademark of Fujitsu Limited.
Notes : • Programming in byte mode ( × 8) is prohibited.
• Programming to the address that already contains data is prohibited.
(It is mandatory to erase data prior to overprogram on the same address.)