MBM29LV400TC-55 Datasheet, PDF (1/58 Pages) SPANSION – FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20862-8E
FLASH MEMORY
CMOS
4M (512K × 8/256K × 16) BIT
MBM29LV400TC/BC-55/70/90
s FEATURES
• Single 3.0 V read, program, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Uses same software commands as E²PROMs
• Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP(1) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
44-pin SOP (Package suffix: PF)
48-pin CSOP (Package suffix: PCV)
48-ball FBGA (Package suffix: PBT)
48-ball SCSP (Package suffix: PW)
• Minimum 100,000 program/erase cycles
• High performance
55 ns maximum access time
• Sector erase architecture
One 8K word, two 4K words, one 16K word, and seven 32K words sectors in word mode
One 16K byte, two 8K bytes, one 32K byte, and seven 64K bytes sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
s PRODUCT LINE UP
Part No.
Power Supply Voltage (V)
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
-55
VCC
=
3.3
V +0.3
–0.3
V
V
55
55
30
MBM29LV400 TC/BC
-70
VCC = 3.0 V
+0.6 V
–0.3 V
70
70
30
(Continued)
-90
90
90
35