MBM29LV160TM90 Datasheet, PDF (1/57 Pages) SPANSION – FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20906-3E
FLASH MEMORY
CMOS
16 M (2M × 8/1M × 16) BIT
MirrorFlash^TM*
MBM29LV160TM/BM 90
s DESCRIPTION
The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words
by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to
be programmed in-system with the standard 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for
program or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
The standard MBM29LV160TM/BM offers access times of 90 ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable
(WE), and output enable (OE) controls.
s PRODUCT LINE UP
(Continued)
Part No.
VCC
Max Address Access Time
Max CE Access Time
Max OE Access Time
MBM29LV160TM/BM
90
3.0 V to 3.6 V
90 ns
90 ns
25 ns
s PACKAGES
48-pin plastic TSOP (1)
Marking Side
48-ball plastic FBGA
(FPT-48P-M19)
(BGA-48P-M20)
* : MirrorFlash^TM is a trademark of Fujitsu Limited.
Notes : • Programming in byte mode ( × 8) is prohibited.
• Programming to the address that already contains data is prohibited (It is mandatory to erase data prior to
overprogram on the same address) .