MBM29F004TC-70 Datasheet, PDF (1/53 Pages) SPANSION – FLASH MEMORY CMOS 4 M (512 K X 8) BIT

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20876-3E
FLASH MEMORY
CMOS
4 M (512 K × 8) BIT
MBM29F004TC/004BC-70/-90
s DESCRIPTION
The MBM29F004TC/BC is a 4 M-bit, 5.0 V-Only Flash memory organized as 512 K bytes of 8 bits each. The
MBM29F004TC/BC is offered in a 32-pin TSOP (1) and 32-pin QFJ (PLCC) packages. This device is designed
to be programmed in-system with the standard system 5.0 V VCC supply. A 12.0 V VPP is not required for write or
erase operations. The device can also be reprogrammed in standard EPROM programmers.
The standard MBM29F004TC/BC offers access times between 70 ns and 90 ns allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE) , write
enable (WE) , and output enable (OE) controls.
The MBM29F004TC/BC is pin and command set compatible with JEDEC standard E²PROMs. Commands are
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the device is similar
to reading from 12.0 V Flash or EPROM devices.
(Continued)
s PRODUCT LINE UP
Part No.
Ambient Temperature ( °C)
Max Address Access Time (ns)
VCC Supply Voltage
Operation
Voltage Consumption ^{Erase/Program}
(mW) (Max) _{TTL Standby mode}
CMOS Standby mode
Max CE Access (ns)
Max OE Access (ns)
MBM29F004TC/BC
-70
-90
−20 to + 70
−40 to + 85
70
90
5.0 V ± 10%
193
275
5.5
0.0275
70
90
30
35