MBM29DL32XTE80 Datasheet, PDF (1/84 Pages) SPANSION – FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20881-7E
FLASH MEMORY
CMOS
32 M (4 M × 8/2 M × 16) BIT Dual Operation
MBM29DL32XTE/BE80/90
s DESCRIPTION
The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or
2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system
3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also
be reprogrammed in standard EPROM programmers.
MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which are considered to be two separate
memory arrays for operations. It is the Fujitsu’s standard 3 V only Flash memories, with the additional capability
of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either
a program or an erase) operation is simultaneously taking place on the other bank.
s PRODUCT LINE UP
(Continued)
Part No.
Power Supply Voltage VCC (V)
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
s PACKAGES
48-pin plastic TSOP (1)
MBM29DL32XTE/BE
80
3.3
+0.3
−0.3
80
90
3.0
+0.6
−0.3
90
80
90
30
35
48-pin plastic TSOP (1)
63-ball plastic FBGA
Marking Side
(FPT-48P-M19)
Marking Side
(FPT-48P-M20)
(BGA-63P-M01)