MBM29DL16XTE70 Datasheet, PDF (1/76 Pages) SPANSION – FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20880-4E
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT Dual Operation
MBM29DL16XTE/BE70/90
s FEATURES
• 0.23 µm Process Technology
• Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes
(Refer to “MBM29DL16XTE/BE Device Bank Divisions Table” in sGENERAL DESCRIPTION)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
s PRODUCT LINE UP
(Continued)
Part No.
Address Access Time (Max)
CE Access Time (Max)
OE Access Time (Max)
Power Supply Voltage
MBM29DL16XTE/BE70
70 ns
70 ns
30 ns
3.0
V
+0.6 V
−0.3 V
MBM29DL16XTE/BE90
90 ns
90 ns
35 ns
s PACKAGES
48-pin plastic TSOP (1)
Marking Side
48-pin plastic TSOP (1)
48-pin plastic FBGA
(FPT-48P-M19)
Marking Side
(FPT-48P-M20)
(BGA-48P-M11)