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CXK5B18120TM- Datasheet, PDF (6/10 Pages) Sony Corporation – 65536-word x 18-bit High Speed Bi-CMOS Static RAM
• Write cycle (1) : WE control
Address
CE
LB, UB
tAS
WE
Data in
Data out
tWC
tA
tWR
W
tCW
tLBW, tUBW
tWP
tWHZ
tDW
tDH
Data
valid
tOW
High impedance
CXK5B18120TM
• Write cycle (2) : CE control
Address
tAS
CE
tWC
tA
tWR
W
tCW
LB, UB
tLBW, tUBW
tWP
WE
Data in
tD
tD
W
H
Data valid
Data out
tLZ
tWHZ
High
impedance
* Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.
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