SLD323XT Datasheet, PDF (4/7 Pages) Sony Corporation – 1W High Power Laser Diode

Temperature dependence of far field pattern
(Perpendicular to junction)
PO = 1000mW
SLD323XT
Dependence of wavelength
Po = 1000mW
820
810
Tth = 25°C
Tth = 10°C
Tth = –5°C
–90 –60 –30 0
30 60 90
Angle [degree]
Differential efficiency vs. Temperature characteristics
1.0
0.5
800
790
–10
0
10
20
30
Tth – Thermistor temperature [°C]
Thermistor characteristics
50
10
5
0
–10
0
10
20
30
Tth – Thermistor temperature [°C]
1–10 _{0 10 20 30 40 50 60 70}
Tth – Thermistor temperature [°C]
TE cooler characteristics
TE cooler characteristics 1
10
Tc = 33°C
TE cooler characteristics 2
10
∆T ^{VS V}
IT ^{= 2.5A}
Tth = 25°C
∆T VS VT
IT = 2.5A
2.0A
5
2.0A
5
4
1.5A
3
1.0A
2
0.5A
2.0A
1
0
0
0
50
100
∆T – Temperature difference [°C]
5
1.5A
5
4
1.0A
3
0.5A
0.5A
∆_T
1.0A1.5A ^{VS Q}
2.0A
2.5A
2
1
0
0
50
100
∆T – Temperature difference [°C]
∆T: Tc – Tth
Tth: Thermistor temperature
Tc: Case temperature
–4–