SLD304XT Datasheet, PDF (3/8 Pages) Sony Corporation – 1000mW High Power Laser Diode

SLD304XT
Example of Representative Characteristics
Optical power output vs. Forward current characteristics
1000
Tth = 0°C
Tth = –10°C
Tth = 15°C
Tth = 30°C
Tth = 25°C
Optical power output vs. Monitor current characteristics
1000
Tth = 15°C
Tth = 0°C
Tth = –10°C
Tth = 25°C
Tth = 30°C
500
500
0
0
500
1000
1500
2000
IF – Forward current [mA]
Threshold current vs. Temperature characteristics
1000
500
100
–10
0
10
20
30
Tth – Thermistor temperature [°C]
Power dependence of near field pattern
Tth = 25°C
PO =
900mW
PO =
800mW
PO =
600mW
PO =
400mW
PO =
200mW
0
0
0.5
1
Imon – Monitor current [mA]
Power dependence of far field pattern
(parallel to junction)
Tth = 25°C
PO = 900mW
PO = 800mW
PO = 600mW
PO = 400mW
PO = 200mW
–30 –20 –10
0
10
20
30
Angle [degree]
Oscillation wavelength vs. Temperature characteristics
830
PO = 900mW
820
810
800
790
200µm
780
–10
0
10
20
30
40
Tth – Thermistor temperature [°C]
–3–