SLD302B Datasheet, PDF (3/7 Pages) Sony Corporation – Block-type 200mW High Power Laser Diode

SLD302B
Example of Representative Characteristics
Optical power output vs. Forward current
200
Tc = –10°C
Tc = 0°C
Tc = 25°C
100
Tc = 50°C
Threshold current vs. Temperature characteristics
1000
500
100
–10
0
10
20
30
40
50
Tc – Case temperature [°C]
0
0
250
500
IF – Forward current [mA]
Power dependence of far field pattern
(parallel to junction)
Tc = 25°C
Power depecdence of near field pattern
Tc = 25°C
PO = 180mW
PO = 90mW
PO = 30mW
PO = 180mW
PO = 150mW
PO = 100mW
PO = 75mW
PO = 50mW
PO = 25mW
–30 –20 –10 0
10 20 30
Angle [degree]
50µm
Oscillation wavelength vs. Temperature characteristics _{Differential efficiency vs. Temperature characteristics}
830
1.5
PO = 180mW
820
810
1.0
800
790
0.5
780
–10
0
10
20
30
40
Tc – Case temperature [°C]
50
0
–3–
–10 0 10 20 30 40 50
Tc – Case temperature [°C]