SLD237VL Datasheet, PDF (2/4 Pages) Sony Corporation – Index-Guided High Power AlGaAs Laser Diode

SLD237VL
Optical and Electrical Characteristics (Tc = 25°C)
Item
Symbol
Conditions
Threshold current
Ith
CW
Operating current
Iop
CW, Po = 80mW
Operating voltage
Vop
Wavelength
λp
Differential efficiency
ηD
Radiation
angle
Paralell
θ//
Perpendicular θ⊥
Astigmatism
As
Positional
accuracy
Angle
Position
∆φ//
∆φ⊥
∆X, ∆Y, ∆Z
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
Tc: Case temperature
Min. Typ. Max.
Unit
25
30
40
mA
90
110 130
mA
—
2.0
2.3
V
779 784 789
nm
0.7
1.0
1.3
mW/mA
7.4
8.3
9.5
deg
15.0 18.0 21.0
deg
–6
—
0
µm
—
— ±1.6
deg
—
— ±2.5
deg
—
—
±80
µm
–2–