DM-232 Datasheet, PDF (2/5 Pages) Sony Corporation – Magnetoresistance Element

Equivalent Circuit
1
VCC
RA
2
VA
RB
RD
4
V
RC ^B
Basic Performance
1) Operation principle
GND
3
Synthetic
magnetic field (a)
DM-232
Bias magnetic field
H=14400A/m
1
Synthetic magnetic field (b)
RA
2
RB
3
External magnetic field H
External magnetic field H
Various resistances change according to the direction of
the combnied bias and external magnetic field.
RD ^{¡) When the direction of the synthetic magnetic field is (a),}
RA,RC : Minimum resistance
4
RB,RD : Maximum resistance
RC _{¡¡) When the direction of the synthetic magnetic field is (b),}
RA,RC : Maximum resistance
RB,RD : Minimum resistance
∗ Device internal structure
(Back of mark face)
3
2
Bias magnetic field
4
1
2) Power supply pin and output pin
2
232
1
1
3
4
VCC
3) Sensitivity direction
Non-Sensitive
Sensitive
2
4
3
The ferromagnetic magnetoresistance element differs
Out put ^{from the semiconductor magnetoresistance element and}
Differential amplifier hole element in that it responds only to the magnetic
field within the element's surface. It is not sensitive to
GND the magnetic field perpendicular to the element.
—2—