SLD335YT Datasheet, PDF (1/4 Pages) Sony Corporation – 4W High Power Laser Diode

4W High Power Laser Diode
SLD335YT
Description
The SLD335YT has a package with a Peltier cooler
and allows independent thermal and electric design.
It realizes a uniform emission area by adopting a
new chip structure.
M-288
Features
• High-optical power output
Recommended optical power output: Po = 4.0W
• High-optical power density: 4W/200µm
(Emitting line width)
Equivalent Circuit
Applications
• Solid state laser excitation
• Material processing
• Measurement
• Printing
TE Cooler
Case
LD
TH
PD
Structure
AlGaAs Quantum Well structure laser diode
1
Operating Lifetime
MTTF 10,000H (effective value) at Po = 4W, Tth = 25°C
3 45
6 7 8 9 10
Absolute Maximum Ratings (Tth = 25°C)
• Optical power output
Pomax
4.4
W
• Reverse voltage
VR LD
2
V
PD
15
V
• Operating temperature (Tth) Topr
–10 to +30
°C
• Storage temperature
Tstg
–40 to +85
°C
Pin Configuration (Top View)
No.
Function
No.
Function
1 TE cooler (negative) 6 Thermistor
2
—
7 Laser diode (cathode)
3 Case
8 Photo diode (anode)
4 Laser diode (anode) 9 Photo diode (cathode)
5 Thermistor
10 TE cooler (positive)
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E03840