SGM2016AM Datasheet, PDF (1/5 Pages) Sony Corporation – GaAs N-channel Dual-Gate MES FET

SGM2016AM/AP
GaAs N-channel Dual-Gate MES FET
For the availability of this product, please contact the sales office.
Description
The SGM2016AM/AP is an N-channel dual-gate
GaAs MES FET for UHF-band low-noise amplification.
This FET is suitable for a wide range of applications
including UHF TV tuners, cellular/cordless phone,
and DBS IF amplifiers.
SGM2016AM
SGM2016AP
Features
• Low voltage operation
• Low noise NF = 1.2dB (typ.) at 900MHz
• High gain Ga = 21dB (typ.) at 900MHz
• High stability
• Built-in gate protection diode
Application
UHF-band high-frequency amplifier, mixer, and oscillator
Structure
GaAs, N-channel, dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage
VDSX
12
V
• Gate 1 to source voltage VG1S
–5
V
• Gate 2 to source voltage VG2S
–5
V
• Drain current
ID
55
mA
• Allowable power dissipation PD
150
mW
• Channel temperature
Tch
150
°C
• Storage temperature
Tstg –55 to +150 °C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E96Y10-PS