SGM2014AN Datasheet, PDF (1/5 Pages) Sony Corporation – GaAs N-channel Dual Gate MES FET

SGM2014AN
GaAs N-channel Dual Gate MES FET
For the availability of this product, please contact the sales office.
Description
The SGM2014AN is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification.
This FET is suitable for a wide range of applications
including TV tuners, cellular radios, and DBS IF
amplifiers.
M-281
Features
• Ultra small package
• Low voltage operation
• Low noise: NF = 1.5dB (typ.) at 900MHz
• High gain: Ga = 18dB (typ.) at 900MHz
• Low cross-modulation
• High stability
• Built-in gate-protection diode
Application
UHF band amplifier, mixer and oscillator
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage
VDSX
12
V
• Gate 1 to source voltage
VG1S
–5
V
• Gate 2 to source voltage
VG2S
–5
V
• Drain current
ID
55
mA
• Allowable power dissipation PD
100
mW
• Channel temperature
Tch
125
°C
• Storage temperature
Tstg –55 to +150 °C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E97938-PS