SGM2013N Datasheet, PDF (1/5 Pages) Sony Corporation – GaAs N-channel Dual-Gate MES FET

SGM2013N
GaAs N-channel Dual-Gate MES FET
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Description
The SGM2013N is an N-channel dual-gate GaAs
MES FET for UHF-band low-noise amplification. This
FET is suitable for a wide range of applications
including cellular/cordless phone.
M-281
Features
• Ultra-small package
• Low voltage operation
• Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz
• High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz
• High stability
• Built-in gate protection diode
Application
UHF-band high-frequency amplifier and mixer
Structure
GaAs, N-channel, dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage
VDSX
6
V
• Gate 1 to source voltage
VG1S
–4
V
• Gate 2 to source voltage
VG2S
–4
V
• Drain current
ID
18
mA
• Allowable power dissipation PD
100
mW
• Channel temperature
Tch
125
°C
• Storage temperature
Tstg –55 to +150
°C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E97144-PS