DM-231 Datasheet, PDF (1/5 Pages) Sony Corporation – Magnetoresistance Element

DM-231
Magnetoresistance Element
For the availability of this product, please contact the sales office.
Description
DM-231 a magnetic sensor using magnetoresist-
M-118 (Plastic)
ance effect is composed of ferromagnetic material
deposited by evaporation on a silicon substrate. It is
suitable for angle of rotation detection.
Features
• Low magnetic field and high sensitivity: bridge type
stands for large output voltage
150 mVp-p (Min.) at VCC=5 V, H=14400 A/m
• Fitted with bias magnet: stable output.
• High reliability: Achieved through silicon nitride
protective film.
Structure
Ferromagnetic thin film circuit (With ferrite magnet)
Applications
• Non-contact angle of rotation detection.
• Contactless potentiometer.
Absolute Maximum Ratings (Ta=25 °C)
• Supply voltage
VCC
10
V
• Storage temperature Tstg –30 to +100 °C
Recommended Operating Conditions
• Supply voltage
VCC
5
V
• Operating temperature Topr –20 to + 75 °C
Electrical Characteristics
Item
Symbol
Output voltage
VO
Midpoint potential
Midpoint potential
difference/Output voltage
VA, VB
|VA-VB|
VO
Total resistance
RT
Condition
VCC=5 V , H=14400 A/m (Peak)
AC magnetic field θ =0 °
VCC=5 V , H=0 A/m
VCC=5 V , H=0 A/m
H=14400 A/m (Peak)
AC magnetic field θ =0 °
Min.
150
2.475
Ta=25 °C
Typ. Max. Unit
mVp-p
2.525 V
15
%
500 650 800
Ω
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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