DM-106B Datasheet, PDF (1/5 Pages) Sony Corporation – Magnetoresistance Element

DM-106B
Magnetoresistance Element
For the availability of this product, please contact the sales office.
Description
The DM-106B is a highly sensitive magneto-
M-110 (Plastic)
resistance element composed of an evaporated
ferromagnetic alloy on a silicon substrate. (The
element can be used for automatic shut off of tape
recorders, as a contactless switch, and as a general
detector of rotational motion.)
Features
• Low power consumption 11 mW (Typ.)
VCC=5 V
• Low magnetic field and high sensitivity
80 mVp-p (Typ.)
VCC=5 V
H=8000 A/m
• High reliability
Ensured through silicon
Nitride protective filming
Structure
Thin-film nickel-cobalt magnetic alloy on silicon
substrate
Absolute Maximum Ratings (Ta=25 °C)
• Supply voltage
VCC
10
V
• Operating temperature Topr
–40 to +100
°C
• Storage temperature
Tstg
–50 to +125
°C
Recommended Operating Supply voltage 5
V
Electrical Characteristics
Item
Symbol
Total resistance
RT
Midpoint potential
VC
Output voltage
VO
Condition
VCC=5 V , H=8000 A/m
Revoiving magnetic field
VCC=5 V , H=8000 A/m
Revoiving magnetic field
VCC=5 V , H=8000 A/m
Revoiving magnetic field
Min.
1.4
2.45
60
Typ.
2.3
2.50
80
(Ta=25 °C)
Max.
Unit
3.7
kΩ
2.55
V
mVp-p
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E60142D5X-TE