CXK5V8512TM- Datasheet, PDF (1/10 Pages) Sony Corporation – 65536-word X 8-bit High Speed CMOS Static RAM

CXK5V8512TM -85LLX/10LLX
65536-word × 8-bit High Speed CMOS Static RAM
For the availability of this product, please contact the sales office.
Description
The CXK5V8512TM is a high speed CMOS static
RAM organized as 65536-words by 8-bits.
A polysilicon TFT cell technology realized
extremely low stand-by current and higher data
retention stability.
Operating on a single 3.3V supply, and special
feature are low power consumption, high speed.
The CXK5V8512TM is a suitable RAM for portable
equipment with battery back up.
32 pin TSOP (Plastic)
Features
• Extended operating temperature range:
–25 to +85°C
• Fast access time:
(Access time)
-85LLX
85ns (Max.)
-10LLX
100ns (Max.)
• Low standby current:
14µA (Max.)
• Low data retention current: 12µA (Max.)
• Single 3.3V supply:
3.3V ± 0.3V
• Low voltage data retention: 2.0V (Min.)
• Package
8mm × 20mm 32 pin TSOP package
Block Diagram
A15
A13
A8
A11
A9
A7
Buffer
A6
A5
A14
A12
A4
A3
A10
Buffer
A0
A2
A1
Row
Decoder
Memory
Matrix
1024 × 512
VCC
GND
I/O Gate
Column
Decoder
Function
65536-word × 8-bit static RAM
Structure
Silicon gate CMOS IC
OE
WE
CE1
CE2
Buffer
I/O Buffer
I/O1 I/O8
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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