CXK5V81000ATM Datasheet, PDF (1/10 Pages) Sony Corporation – 131072-word X 8-bit High Speed CMOS Static RAM

CXK5V81000ATM -85LLX/10LLX
131072-word × 8-bit High Speed CMOS Static RAM
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Description
The CXK5V81000ATM is a high speed CMOS
static RAM organized as 131072-words by 8-bits.
A polysilicon TFT cell technology realized
extremely low stand-by current and higher data
retention stability.
Operating on a single 3.3V supply, and special
feature are low power consumption, high speed.
The CXK5V81000ATM is a suitable RAM for
portable equipment with battery back up.
32 pin TSOP (Plastic)
Block Diagram
Features
A10
• Extended operating temperature range:
A11
–25 to +85°C
A9
A8
• Fast access time:
A13
A15
(Access time)
A16
A14
-85LLX
85ns (Max.)
A12
A7
-10LLX
100ns (Max.)
• Low standby current:
28µA (Max.)
A6
• Low data retention current: 24µA (Max.)
A5
A4
• Single 3.3V supply:
3.3V ± 0.3V
A3
A2
• Low voltage data retention: 2.0V (Min.)
A1
A0
• Package
8mm × 20mm 32 pin TSOP package
OE
WE
Function
CE1
131072-word x 8-bit static RAM
CE2
Buffer
Row
Decoder
Memory
Matrix
1024 × 512
VCC
GND
Buffer
Buffer
I/O Gate
Column
Decoder
I/O Buffer
I/O1 I/O8
Structure
Silicon gate CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E95715-ST