CXK5V16100TM Datasheet, PDF (1/10 Pages) Sony Corporation – 65536-word X 16-bit High Speed CMOS Static RAM

CXK5V16100TM -85LLX/10LLX
65536-word × 16-bit High Speed CMOS Static RAM
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Description
CXK5V16100TM is a general purpose high speed
CMOS static RAM organized as 65536-words by
16-bits. Operating on a single 3.3V supply, this
asynchronous IC is suitable for high speed and low
power consumption applications where battery back
up for nonvolatility is required.
44 pin TSOP (PIastic)
Features
• Extended operating temperature range: –25 to +85°C
• Fast access time:
(Access time)
-85LLX
85ns (max.)
-10LLX
100ns (max.)
• Low power consumption operation:
Standby / DC operation
1.7µW (typ.) / 3.3mW (typ.)
• Single 3.3V supply: 3.3V±0.3V
• Fully static memory: No clock or timing strobe
required
• Equal access and cycle time
• Common data input and output: three state output
• Directly LVTTL compatible: All inputs and outputs
• Low voltage data retention: 2.0V (min.)
• 400mil 44pin TSOP (type II) package
Function
65536-word × 16-bit static RAM
Structure
Silicon gate CMOS IC
Block Diagram
A1
A0
A7
A6
A5
A4
A3
A2
A15
A14
Buffer
Vcc
GND
Memory
Matrix
512 × 1024
Row
Decoder
Memory
Matrix
512 × 1024
Vcc
GND
CE
UB
LB
Control
OE
WE
I/O Gate
Column
Decoder
Pre
Decoder
I/O Gate
Column
Decoder
A13
A12
A11
A10
Buffer
A9
A8
I/O Buffer
I/O Buffer
I/O1 I/O8
I/O9 I/O16
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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