CXK5T8512TM Datasheet, PDF (1/10 Pages) Sony Corporation – 65536-word X 8-bit High Speed CMOS Static RAM

CXK5T8512TM/TN -10LLX/12LLX
65536-word × 8-bit High Speed CMOS Static RAM _Preliminary
For the availability of this product, please contact the sales office.
Description
The CXK5T8512TM/TN is a high speed CMOS
static RAM organized as 65536-words by 8-bits.
Special feature are low power consumption and
high speed.
The CXK5T8512TM/TN is a suitable RAM for
portable equipment with battery back up.
CXK5T8512TM
32 pin TSOP (Plastic)
CXK5T8512TN
32 pin TSOP (Plastic)
Features
• Extended operating temperature range:
–25 to +85°C
Block Diagram
• Wide supply voltage range operation: 2.7 to 3.6V
• Fast access time:
(Access time)
3.0V operation
CXK5T8512TM/TN-10LLX 100ns (Max.)
CXK5T8512TM/TN-12LLX 120ns (Max.)
3.3V operation
CXK5T8512TM/TN-10LLX 85ns (Max.)
CXK5T8512TM/TN-12LLX 100ns (Max.)
A15
A13
A8
A11
Memory
VCC
A9
A7
Buffer
Row
Decoder
Matrix
A6
1024 × 512
GND
A5
A14
A12
• Low standby current:
14µA (Max.)
• Low data retention current: 12µA (Max.)
• Low power data retention: 2.0V (Min.)
• Package line-up
CXK5T8512TM
A4
A3
A10
Buffer
A0
A2
A1
I/O Gate
Column
Decoder
8mm × 20mm 32 pin TSOP package
OE
CXK5T8512TN
8mm × 13.4mm 32 pin TSOP package ^WE
Buffer
I/O Buffer
CE1
Function
CE2
65536-word × 8-bit static RAM
I/O1 I/O8
Structure
Silicon gate CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
PE96727-PS