CXK5T8257BTM Datasheet, PDF (1/10 Pages) Sony Corporation – 32768-word X 8-bit High Speed CMOS Static RAM

CXK5T8257BTM/BYM/BM -10LLX/12LLX
32768-word × 8-bit High Speed CMOS Static RAM Preliminary
For the availability of this product, please contact the sales office.
Description
The CXK5T8257BTM/BYM/BM is 262,144 bits high
speed CMOS static RAM organized as 32768-words
CXK5T8257BTM
28 pin TSOP (Plastic)
CXK5T8257BYM
28 pin TSOP (Plastic)
by 8 bits.
Special feature are low power consumption and
high speed.
The CXK5T8257BTM/BYM/BM is a suitable RAM
for portable equipment with battery back up.
Features
• Extended operating temperature range: –25 to +85°C
CXK5T8257BM
28 pin SOP (Plastic)
• Wide supply voltage range operation: 2.7 to 3.6V
• Fast access time:
(Access time)
3.0V operation -10LLX 100ns (Max.)
-12LLX 120ns (Max.)
3.3V operation -10LLX
85ns (Max.)
-12LLX 100ns (Max.)
• Low standby current: 7.0µA (Max.)
• Low power data retention: 2.0V (Min.)
Block Diagram
• Available in many packages
CXK5T8257BTM/BYM
A14
8mm × 13.4mm 28 pin TSOP Package ^A13
A12
CXK5T8257BM
A11
450mil 28 pin SOP Package
A9
A8
Function
A7
A6
32768-word × 8 bit static RAM
A5
Buffer
Row
Decoder
Memory
Matrix
512 × 512
VCC
GND
Structure
Silicon gate CMOS IC
A10
A4
A3
Buffer
A2
A1
A0
I/O Gate
Column
Decoder
OE
Buffer
WE
CE
I/O Buffer
I/O1 I/O8
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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PE96509-ST