CXK5T81000ATN Datasheet, PDF (1/10 Pages) Sony Corporation – 131072-word X 8-bit High Speed CMOS Static RAM

CXK5T81000ATN/AYN -10LLX/12LLX
131072-word × 8-bit High Speed CMOS Static RAM Preliminary
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Description
The CXK5T81000ATN/AYN is a high speed
CMOS static RAM organized as 131072-words by
8-bits.
Special feature are low power consumption and
high speed.
The CXK5T81000ATN/AYN is a suitable RAM for
portable equipment with battery back up.
CXK5T81000ATN
32 pin TSOP (Plastic)
CXK5T81000AYN
32 pin TSOP (Plastic)
Features
• Extended operating temperature range:
–25 to +85°C
• Wide supply voltage range operation: 2.7 to 3.6V
• Fast access time:
(Access time)
3.0V operation -10LLX 100ns (Max.)
-12LLX 120ns (Max.)
3.3V operation -10LLX 85ns (Max.)
-12LLX 100ns (Max.)
• Low standby current:
28µA (Max.)
• Low data retention current: 24µA (Max.)
• Low power data retention: 2.0V (Min.)
• Package 8mm × 13.4mm 32 pin TSOP package
Function
131072-word × 8-bit static RAM
Structure
Silicon gate CMOS IC
Block Diagram
A10
A11
A9
A8
A13
A15
Buffer
A16
A14
A12
A7
A6
A5
A4
A3
Buffer
A2
A1
A0
OE
Buffer
WE
CE1
CE2
Row
Decoder
Memory
Matrix
1024 × 1024
VCC
GND
I/O Gate
Column
Decoder
I/O Buffer
I/O1 I/O8
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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PE96726-PS