CXK5B81020J Datasheet, PDF (1/9 Pages) Sony Corporation – 131072-word ´ 8-bit High Speed Bi-CMOS Static RAM

CXK5B81020J/TM -12
131072-word × 8-bit High Speed Bi-CMOS Static RAM
For the availability of this product, please contact the sales office.
Description
CXK5B81020J/TM is a high speed 1M bit Bi-CMOS
static RAM organized as 131072 words by 8 bits.
CXK5B81020J
32 pin SOJ (PIastic)
CXK5B81020TM
32 pin TSOP (PIastic)
Operating on a single 3.3V supply this asynchronous
IC is suitable for use in high speed and low power
applications.
Features
• Single 3.3V power supply: 3.3V ± 0.3V
• Fast access time
12ns (Max.)
• Low standby current: 10mA (Max.)
• Low power operation 864mW (Max.)
• Package line-up
Dual Vcc/Vss
CXK5B81020J 400mil 32pin SOJ package
CXK5B81020TM 400mil 32pin TSOP package
Function
131072 word × 8-bit static RAM
Structure
Silicon gate Bi-CMOS IC
Block Diagram
Pin Configuration (Top View) Pin Description
A15
Symbol
Description
A16
A3 1
32 A4
A9
Vcc
A2 ₂
31 A5 A0 to A16 Address input
A8
A13
Buffer
Memory
Row
Matrix
Decoder _{256 × 4096}
A1 ₃
A0 ₄
30 ^A6
29 ^{A7 I/O1 to I/O8 Data input}
A14
CE ₅
28 ^OE
CE
Chip enable input
A11
GND
I/O1 6
27 I/O8
A10
I/O2 ₇
26 I/O7 _WE
Write enable input
Vcc 8
GND 9
25 GND
24 Vcc
OE
Output enable input
A12
A5
I/O3 1
0
I/O4 11
23 I/O6
22 ^I/O5
VCC
+3.3V power supply
A4
A3
A0
Buffer
I/O Gate
Column
Decoder
WE 12
A16 ₁₃
A15 14
2 A8
1
20
A9
19 ^A10
GND
NC
Ground
No connection
A14 15
18 A11
A2
A13 16
17 A12
A1
A6
A7
WE
I/O
OE
Buffer
CE
I/O1 I/O8
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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