CXK5B41020TM- Datasheet, PDF (1/9 Pages) Sony Corporation – 262144-word x 4-bit High Speed Bi-CMOS Static RAM

CXK5B41020TM -12
262144-word × 4-bit High Speed Bi-CMOS Static RAM
For the availability of this product, please contact the sales office.
Description
CXK5B41020TM is a high speed 1M bit Bi-CMOS
32 pin TSOP (PIastic)
static RAM organized as 262144 words by 4 bits.
Operating on a single 3.3V supply this asynchronous
IC is suitable for use in high speed and low power
applications.
Features
• Single 3.3V power supply: 3.3V±0.3V
• Fast access time
12ns (Max.)
• Low standby current: 10mA (Max.)
• Low power operation 792mW (Max.)
• Package line-up
Dual Vcc/Vss
CXK5B41020TM 400mil 32pin TSOP package
Function
262144 word × 4-bit static RAM
Structure
Silicon gate Bi-CMOS IC
Block Diagram
Pin Configuration (Top View) Pin Description
A16
A17
NC ₁
32 A4
Symbol
Description
A10
A9
A14
Vcc
Memory
Buffer
Row
Matrix
Decoder _{256 × 4096}
A3 2
A2 3
A1 4
31 A5
30 A6
29 A7
A0 to A17 Address input
I/O1 to I/O4 Data input/output
A15
A0 5
28 A8
A12
GND
CE 6
27 OE
CE
Chip enable input
A11
I/O1 7
26 I/O4
Vcc 8
25 GND
WE
Write enable input
GND 9
24 Vcc
A6
I/O2 10
23 I/O3
OE
Output enable input
A13
WE 11
22 A9
A5
A17 12
21 A10
VCC
+3.3V power supply
A4
I/O Gate
A16 13
20 A11
A3
Buffer
Column
Decoder
A15 14
19 A12
GND
Ground
A0
A2
A14 15
NC 16
18 A13
17 NC
NC
No connection
A1
A7
A8
WE
I/O Buffer
OE
CE
I/O1 I/O4
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E93726-ST