CXG1178K Datasheet, PDF (1/6 Pages) Sony Corporation – POWER AMPLIFIER MODULE FOR JCDMA

CXG1178K
Power Amplifier Module for JCDMA
Description
The CXG1178K is the power amplifier module which
operates at a single power supply. This IC is designed
using the Sony's original p-Gate HFET process.
Features
• Single power supply operation:
VDD1 = VDD2 = 3.5V (High mode),
1.5V (Mid mode),
1.0V (Low mode),
VGG = 2.8V
• Ultrasmall package: 0.027cc (4.5mm × 4.5mm × 1.35mm)
• High efficiency: ηadd = 40.5%@POUT = 27.5dBm (High mode),
ηadd = 17.6%@POUT = 14dBm (Mid mode)
• Output power (High/Mid/Low mode switching supported):
POUT = 18 to 27.5dBm: High mode,
POUT = 14 to 18dBm: Mid mode,
POUT ≤ 14dBm: Low mode
• Gain (High mode): Gp = 28.5dB (@900MHz)
Applications
Power amplifier for JCDMA system cellular phones
Structure
p-Gate HFET module
Absolute Maximum Ratings (Ta = 25°C)
• Operating case temperature Tcase
–30 to +110 °C
• Storage temperature
Tstg
–30 to +125 °C
• Bias voltage
VDD1, VDD2
6
V
• Bias voltage
VGG
3.3
V
(@VDD1 = VDD2 ≤ 3.5V)
• Input power
PIN
8
dBm
Recommended Bias Voltage Conditions
• VDD1 = VDD2 = 1.0 to 4.2V
• VGG = 2.8V ± 1%
8 pin LCC (Ceramic)
Descriptions in this specification are specified for the Sony's recommended evaluation board .
GaAs module is ESD sensitive devices. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E04660-PS