CXG1109EN Datasheet, PDF (1/9 Pages) Sony Corporation – Receive Dual Low Noise Amplifier/Mixer

CXG1109EN
Receive Dual Low Noise Amplifier/Mixer
Description
The CXG1109EN is a receive dual low noise amplifier/
mixer MMIC. This IC is designed using the Sony’s
GaAs J-FET process.
16 pin VSON (Plastic)
Features
• High conversion gain: Gp = 16.5 to 17dB (LNA Typ.)
Gc = 9.5 to 10dB (MIX Typ.)
• Low noise figure: NF = 1.5dB (LNA Typ.)
NF = 4 to 5dB (MIX Typ.)
• Single 3V power supply operation
• Low LO input power operation PLO = –12.5dBm
• Single CTL pin achieved by the built-in inverter
circuit
• 16-pin VSON package
Applications
800MHz Japan digital cellular telephones (PDC)
Structure
GaAs J-FET MMIC
Absolute Maximum Ratings (Ta = 25°C)
• Supply voltage
VDD
4.5
V
• Input power
PIN
+13 dBm
• Current consumption IDD
15
mA
• Operating temperature Topr –35 to +85 °C
• Storage temperature Tstg –65 to +150 °C
Recommended Operating Voltages
• Supply voltage
VDD
2.7 to 3.3 V
• Control voltage
VCTL (H) 2.4 to 3.3 V
VCTL (L) 0 to 0.3
V
Block Diagram
Pin Configuration
LNA RFIN1 9
IFOUT 16
8 LNA RFIN2
6 LNA RFOUT
3 MIX RFIN
1 LO IN
LNA RFIN1 9
CAP 10
GND 11
CTL 12
GND 13
GND 14
VDD2 (LO AMP) 15
IFOUT/VDD3 (MIX) 16
8 LNA RFIN2
7 CAP
6 LNA RFOUT/VDD1 (LNA)
5 GND
4 OPT
3 MIX RFIN
2 GND
1 LO IN
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E00924A1Y-PS