CXG1030N Datasheet, PDF (1/5 Pages) Sony Corporation – Power Amplifier for PHS

Power Amplifier for PHS
CXG1030N
Description
The CXG1030N is a power amplifier for PHS. This
IC is designed using the Sony’s GaAs J-FET process
and operates at a single power supply.
16 pin SSOP (Plastic)
Features
• Output power
21 dBm
• Positive power supply
3.0 V
• Low current consumption 170 mA
• High power gain
39 dB Typ.
• Small mold package 16-pin SSOP
Structure
GaAs J-FET MMIC
Absolute Maximum Ratings (Ta=25 °C)
• Supply voltage
VDD
6
V
• Voltage between gate and source
Vgs0
1.5
V
• Drain current
IDD
500
mA
• Power dissipation
PD
3
W
• Channel temperature Tch
175
°C
• Operating temperature Top –35 to +85 °C
• Storage temperature Tstg –65 to +150 °C
Electrical Characteristics
VDD=3.0 V, VCTL=2.0 V, f=1.90 GHz
(Ta=25 °C)
Item
Symbol
Min.
∗1 _{Current consumption}
IDD
∗1 _{Gate voltage adjustment value}
VGG2
0
Output power
POUT
21
∗2 _{Power gain}
GP
36
∗2 _{Adjacent channel leak power ratio}
(600 kHz ±100 kHz)
ACPR600
Typ.
170
0.4
39
–59
Max.
0.8
–54
Unit
mA
V
dBm
dB
dBc
∗¹ Values where VGG1 and VGG2 are adjusted so that IDD becomes 170 mA when 21.0 dBm is output.
∗² When 21.0 dBm is output.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E96706-TE