1T365 Datasheet, PDF (1/4 Pages) Sony Corporation – Silicon Variable Capacitance Diode

Silicon Variable Capacitance Diode
1T365
Description
The 1T365 is a variable capacitance diode
contained in super miniature package, and used for
electronic-tuning of BS tuner.
M-235
Features
• Super miniature package
• Small capacitance
0.7 pF Typ. (VR=25 V)
• Low leakage current 10 nA Max. (VR=28 V)
• Small serial resistance 1.1 Ω Typ.
(VR=1 V, f=470 MHz)
Structure
Silicon epitaxial planar type diode
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage
VR
30
V
• Maximum reverse voltage VRM
35
V
(RL≥10 kΩ)
• Operating temperature Topr –20 to +75 °C
• Storage temperature
Tstg –65 to +150 °C
Electrical Characteristics
Item
Reverse current
Diode capacitance
Capacitance ratio
Serial resistance
Capacitance deviation in a
matching group
Symbol
IR
C2
C25
C2/C25
rs
Conditions
VR=28 V
VR=2 V, f=1 MHz
VR=25 V, f=1 MHz
VR=1 V, f=470 MHz
∆C VR=2 to 25 V, f=1 MHz
(Ta=25 °C)
Min. Typ. Max. Unit
10
nA
3.31
4.55 pF
0.61 0.70 0.77 pF
5.0
5.7
1.1 1.8
Ω
5.0
%
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E91539A82-TE