MUR1660CT Datasheet, PDF (4/6 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Diodes

SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0308, Rev. -
MUR1660CT
Green Products
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
(Note 1)
@T_A = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage (per element) @I_F = 8.0A, T_J=25°C
@I_F = 8.0A, T_J=125°C
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 125°C
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Approximate Weight
Case Style
Note: 1.Measured with I_F=0.5A; I_R=1.0A; I_RR=0.25A.
2. Mount on Cu-Pad Size 16mm×16mm on P.C.B.
Symbol
V_RRM
V_RWM
V_R
Io
I_FSM
V_FM1
V_FM2
I_R
Trr
R_θJA
T_J, T_STG
wt
MUR1660CT
600
16.0
110
2.2
2.0
5
50
50
25
-55 to +150
2.0
TO-220AB
Unit
V
A
A
V
V
µA
Ns
K/W
°C
g
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