MBRF2050 Datasheet, PDF (4/6 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – Guard ring for enhanced ruggedness and long term reliability

SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0075, Rev. A
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(per leg) *
Reverse Current
(per leg) *
Junction Capacitance
(per leg)
Voltage Rate of Change
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
V_F1
I_R1
C_T
dv/dt
Condition
@ 10A, Pulse, T_J = 25 °C
@V_R = rated VR Pulse
T_J = 25 °C
@V_R = 4V, T_C = 25 °C
f_SIG = 1MHz
-
MBRF2050/2060CT
Green Products
Max.
0.80
1.0
400
10,000
Units
V
mA
pF
V/μs
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature Range
Storage Temperature Range
Maximum Thermal
Resistance Junction to Case
Symbol
T_J
T_stg
Condition
-
-
R_θJC DC operation
Typical Thermal Resistance
Case to Heat Sink
Approximate Weight
Case Style
R_θCS
wt
Mounting surface, smooth and
greased
(only for ITO-220)
-
ITO-220AB
Specification
-55 to +150
-55 to +150
2.3
0.50
2
Units
°C
°C
°C/W
°C/W
g
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