ER3M Datasheet, PDF (4/6 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – Low Forward Voltage Drop, High Efficiency

SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0246, Rev. A
ER3M
Green Products
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
@T_L = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@I_F = 3.0A, T_J=25°C
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 100°C
Typical Thermal Resistance Junction to Lead (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating and Storage Temperature Range
Case Style
Symbol
V_RRM
V_RWM
V_R
Io
I_FSM
V_F
I_RM
R_θJL
Trr
C_J
T_J, T_STG
Note: 1. Mounted on P.C. Board with 8.0mm² lead area
2. Measured with I_F=0.5A; I_R=1.0A; I_RR=0.25A.
3. Measured at 1.0 MHZ and applied reverse voltage of 4.0 VDC
ER3M
1000
3.0
100
1.7
5.0
500
16
75
45
-65 to +150
SMC
Unit
V
A
A
V
µA
K/W
ns
pF
°C
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