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16CTQ80 Datasheet, PDF (4/6 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – SCHOTTKY RECTIFIER
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0610, Rev. -
16CTQ080/100
16CTQ080/100/S
16CTQ080/100/-1
Green Products
Electrical Characteristics:
Characteristics
Forward Voltage Drop
*
Reverse Current at DC
condition
Reverse Current
Junction Capacitance
Typical Series Inductance
Voltage Rate of
Change(Rated VR)
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
VF1
VF2
IR1
IR2
CT
LS
dv/dt
Condition
@ 8A, Pulse, TJ = 25 °C
@ 16A, Pulse, TJ = 25 °C
@ 8A, Pulse, TJ = 125 °C
@ 16A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm from
package body
-
Max.
0.75
0.88
0.58
0.69
0.55
7.0
500
8.0
10,000
Units
V
V
mA
mA
pF
nH
V/μs
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Maximum Thermal
Resistance Junction to Case
(per leg)
Typical Thermal Resistance,
case to Heat Sink
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
Condition
-
-
DC operation
Specification
-55 to +150
-55 to +150
3.25
Units
°C
°C
°C/W
Rθcs Mounting surface, smooth and
greased
0.50
°C/W
wt
-
2/1.41
g
TO-220AB,D2PAK,TO-262(Suffix“s”for D2PAK; Suffix“-1”for TO-262)
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