SB540 Datasheet, PDF (3/5 Pages) Sirectifier Global Corp. – Schottky Barrier Diode

SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0066 Rev. -
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop*
Max. Reverse Current (per
leg) *
Max. Junction Capacitance
(per leg)
Max. Voltage Rate of Change
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
V_F1
V_F2
I_R1
I_R2
C_T
dv/dt
Condition
@ 5A, Pulse, T_J = 25 °C
@ 5 A, Pulse, T_J = 125 °C
@V_R = rated VR
T_J = 25 °C
@V_R = rated VR
T_J = 125 °C
@V_R = 5V, T_C = 25 °C
f_SIG = 1MHz
-
SB540
Green Products
Max.
0.65
0.63
1.0
30
200
10,000
Units
V
V
mA
mA
pF
V/us
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Lead
Maximum Thermal
Resistance, Junction to
Ambiebt
Approximate Weight
Case Style
Symbol
T_J
T_stg
R_θJL
R_θJA
wt
Condition
-
-
-
-
-
DO-201AD
Specification
-55 to +125
-55 to +125
12
Units
°C
°C
°C/W
111
°C/W
1.02
g
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