MURF1020CTR Datasheet, PDF (3/5 Pages) Thinki Semiconductor Co., Ltd. – 10.0 Ampere Insulated Common Anode Ultra Fast Recovery Rectifier

SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0346, Rev. -
MURF1020CTR
Green Products
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop*
Max. Reverse Current*
Max. Reverse Recovery Time
RSM Isolation Voltage
(t=1.0 second,R.H.<
=30%,
T_A =25°C)
Symbol
V_F1
V_F2
I_R1
I_R2
t_rr
V_1so
Condition
@ 10A, Pulse, T_J = 25°C
@ 10A, Pulse, T_J = 100°C
@V_R = rated VR
T_J = 25°C
@V_R = rated VR
T_J = 100°C
I_F=500mA, I_R=1A,and I_rm=250mA
Clip mouting, the epoxy body
away from the heatsink edge by
more than 0.110”along the lead
direction.
Clip mouting, the epoxy body is
inside the heatsink
Screw mounting, the epoxy body
is inside the heatsink
* Pulse width < 300 µs, duty cycle < 2%
Max.
1.2
1.0
10
100
35
4500
3500
1500
Units
V
V
μA
μA
ns
V
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
Approximate Weight
Case Style
Symbol
T_J
T_stg
R_θJC
wt
Condition
-
-
DC operation
-
ITO-220AB
Specification
-55 to +150
-55 to +150
5.0
Units
°C
°C
°C/W
2.0
g
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