MBRF5150 Datasheet, PDF (3/5 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – High frequency operation

Technical Data
Data Sheet N1780, Rev. -
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Reverse Current at DC
condition*
Junction Capacitance
Typical Series Inductance
Voltage Rate of Change
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
V_F1
V_F2
I_R1
I_R2
C_T
L_S
dv/dt
Condition
@ 5A, Pulse, T_J = 25 °C
@ 5A, Pulse, T_J = 125 °C
@V_R = rated VR
T_J = 25 °C
@V_R = rated VR
T_J = 125 °C
@V_R = 5V, T_C = 25 °C
f_SIG = 1MHz
Measured lead to lead 5 mm from
package body
-
MBRF5150
Green Products
Max.
0.93
0.73
1.0
7.0
200
8.0
10,000
Units
V
V
mA
mA
pF
nH
V/μs
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Maximum Thermal
Resistance Junction to Case
Approximate Weight
Case Style
Symbol
T_J
T_stg
R_θJC
Condition
-
-
DC operation
wt
-
ITO-220AC
Specification
-55 to +150
-55 to +150
4.5
Units
°C
°C
°C/W
1.8
g
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